High efficiency organic photovoltaic cells employing hybridized mixed-planar heterojunctions

ABSTRACT

A device is provided, having a first electrode, a second electrode, and a photoactive region disposed between the first electrode and the second electrode. The photoactive region includes a first organic layer comprising a mixture of an organic acceptor material and an organic donor material, wherein the first organic layer has a thickness not greater than 0.8 characteristic charge transport lengths, and a second organic layer in direct contact with the first organic layer, wherein: the second organic layer comprises an unmixed layer of the organic acceptor material or the organic donor material of the first organic layer, and the second organic layer has a thickness not less than about 0.1 optical absorption lengths. Preferably, the first organic layer has a thickness not greater than 0.3 characteristic charge transport lengths. Preferably, the second organic layer has a thickness of not less than about 0.2 optical absorption lengths. Embodiments of the invention can be capable of power efficiencies of 2% or greater, and preferably 5% or greater.

This application is a continuation-in-part of U.S. application Ser. No.10/822,774, filed on Apr. 13, 2004, which is incorporated herein byreference in its entirety.

The invention disclosed herein was made with Government support; theGovernment has certain rights in this invention.

FIELD OF THE INVENTION

The present invention relates to efficient organic photosensitivedevices.

BACKGROUND

Opto-electronic devices that make use of organic materials are becomingincreasingly desirable for a number of reasons. Many of the materialsused to make such devices are relatively inexpensive, so organicopto-electronic devices have the potential for cost advantages overinorganic devices. In addition, the inherent properties of organicmaterials, such as their flexibility, may make them well suited forparticular applications such as fabrication on a flexible substrate.Examples of organic opto-electronic devices include organic lightemitting devices (OLEDs), organic transistors/phototransistors, organicphotovoltaic cells, and organic photodetectors. For OLEDs, the organicmaterials may have performance advantages over conventional (i.e.,inorganic) materials. For example, the wavelength at which an organicemissive layer emits light may generally be readily tuned withappropriate dopants. For organic transistors/phototransistors, thesubstrates upon which they are constructed may be flexible, providingfor broader applications in industry and commerce.

As used herein, the term “organic” includes polymeric materials as wellas small molecule organic materials that may be used to fabricateorganic devices including opto-electronic devices. “Small molecule”refers to any organic material that is not a polymer, and “smallmolecules” may actually be quite large. Small molecules may includerepeat units in some circumstances. For example, using a long chainalkyl group as a substituent does not remove a molecule from the “smallmolecule” class. Small molecules may also be incorporated into polymers,for example as a pendent group on a polymer backbone or as a part of thebackbone. Small molecules may also serve as the core moiety of adendrimer, which consists of a series of chemical shells built on thecore moiety. Small molecules generally have a well defined molecularweight, whereas polymers generally do not have a well defined molecularweight.

General background information on small molecular weight organicthin-film photodetectors and solar cells may be found in Peumans et al.,“Small Molecular Weight Organic Thin-Film Photodetectors and SolarCells,” Journal of Applied Physics-Applied Physics Reviews-FocusedReview, Vol. 93, No. 7, pp. 3693-3723 (April 2003).

The “fill factor” (FF) of a solar cell is P_(max)/(Jsc*Voc), whereP_(max) is the maximum power of the solar cell, determined by findingthe point on the I-V curve for which the product of the current andvoltage is a maximum. A high FF is an indication of how “square” the I-Vcurve for a solar cell appears.

Optoelectronic devices rely on the optical and electronic properties ofmaterials to either produce or detect electromagnetic radiationelectronically or to generate electricity from ambient electromagneticradiation. Photosensitive optoelectronic devices convert electromagneticradiation into electricity. Photovoltaic (PV) devices or solar cells,which are a type of photosensitive optoelectronic device, arespecifically used to generate electrical power. PV devices, which maygenerate electrical power from light sources other than sunlight, areused to drive power consuming loads to provide, for example, lighting,heating, or to operate electronic equipment such as computers or remotemonitoring or communications equipment. These power generationapplications also often involve the charging of batteries or otherenergy storage devices so that equipment operation may continue whendirect illumination from the sun or other ambient light sources is notavailable. As used herein the term “resistive load” refers to any powerconsuming or storing device, equipment, or system. Another type ofphotosensitive optoelectronic device is a photoconductor cell. In thisfunction, signal detection circuitry monitors the resistance of thedevice to detect changes due to the absorption of light. Another type ofphotosensitive optoelectronic device is a photodetector. In operation aphotodetector has a voltage applied and a current detecting circuitmeasures the current generated when the photodetector is exposed toelectromagnetic radiation. A detecting circuit as described herein iscapable of providing a bias voltage to a photodetector and measuring theelectronic response of the photodetector to ambient electromagneticradiation. These three classes of photosensitive optoelectronic devicesmay be characterized according to whether a rectifying junction asdefined below is present and also according to whether the device isoperated with an external applied voltage, also known as a bias or biasvoltage. A photoconductor cell does not have a rectifying junction andis normally operated with a bias. A PV device has at least onerectifying junction and is operated with no bias. A photodetector has atleast one rectifying junction and is usually but not always operatedwith a bias.

A need exists for an organic photovoltaic cells with a higherefficiency.

SUMMARY OF THE INVENTION

A device is provided, having a first electrode, a second electrode, anda photoactive region disposed between the first electrode and the secondelectrode. The photoactive region includes a first organic layercomprising a mixture of an organic acceptor material and an organicdonor material, wherein the first organic layer has a thickness notgreater than 0.8 characteristic charge transport lengths, and a secondorganic layer in direct contact with the first organic layer, wherein:the second organic layer comprises an unmixed layer of the organicacceptor material or the organic donor material of the first organiclayer, and the second organic layer has a thickness not less than about0.1 optical absorption lengths. Preferably, the first organic layer hasa thickness not greater than 0.3 characteristic charge transportlengths. Preferably, the second organic layer has a thickness of notless than about 0.2 optical absorption lengths. Embodiments of theinvention can be capable of power efficiencies of 2% or greater, andpreferably 5% or greater.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of an organic photovoltaic cell inaccordance with an embodiment of the invention.

FIG. 2 is a schematic diagram of another organic photovoltaic cell inaccordance with an embodiment of the invention.

FIG. 3 is a schematic diagram of yet another organic photovoltaic cellin accordance with an embodiment of the invention.

FIG. 4 illustrates a method of making an organic photovoltaic cell inaccordance with an embodiment of the invention.

FIG. 5 shows FIG. 5 shows an energy level diagram of a device.

FIG. 6 shows J-V characteristics of a hybrid device

FIG. 7 shows additional photovoltaic characteristics of the devicedescribed with reference to FIG. 6.

FIG. 8 shows absorption spectra of CuPc:C₆₀ films with various mixtureratios, deposited on ITO.

FIG. 9 shows normalized photocurrent—voltage characteristics undervarious light intensities for the devices described with respect to FIG.6.

FIG. 10 shows the current density vs voltage (J-V) characteristics inthe dark for a planar HJ device and a hybrid HJ device.

FIG. 11 shows the dependences of n and J_(s) on the mixed layerthickness d_(m), for hybrid HJ cells with d_(D)=d_(A)−200 Å=200Å−d_(m)/2.

FIG. 12 shows the photocurrent density, J_(Ph), at an illuminationintensity of P_(O)=120 mW/cm² for hybrid devices having various mixedlayer thicknesses.

FIG. 13 shows experimental J-V characteristics at various P_(O) for ahybrid device with a mixed layer thickness of 200 Å.

FIG. 14 shows absorption spectra of a planar HJ device and a hybrid HJdevice with a mixed layer thickness of 200 Å.

FIG. 15 shows the illumination intensity dependences of η_(P), FF, andV_(OC) for hybrid HJ devices and a planar HJ device.

FIG. 16 shows X-ray diffraction results for homogeneous and mixed CuPcand C₆₀ films.

DETAILED DESCRIPTION

Organic photovoltaic (PV) cells have attracted considerable attentiondue to their potential for low cost solar or ambient energy conversion.Early results, with an organic PV cell based on a single donor-acceptor(D-A) heterojunction, resulted in a 1%-efficient thin-film. See C. W.Tang, Appl. Phys. Lett. 48, 183 (1986). The power conversion efficiency,η_(P), has steadily improved since then through the use of new materialsand device structures. See P. Peumans et al., J. Appl. Phys. 93, 3693(2003); A. Yakimov and S. R. Forrest, Appl. Phys. Lett. 80, 1667 (2002);P. Peumans and S. R. Forrest, Appl. Phys. Lett. 79, 126 (2001); S. E.Shaheen et al., Appl. Phys. Lett. 78, 841 (2001); P. Peumans et al.,Nature (London) 425, 158 (2003). In particular, η_(p)=(3.6±0.2)% under 1sun (100 mW/cm²) AM1.5G simulated solar illumination was achieved in adouble heterostructure copper phthalocyanine (CuPc)/C₆₀ thin-film cell.P. Peumans and S. R. Forrest, Appl. Phys. Lett. 79, 126 (2001). However,these single heterojunction devices are limited in that the “activeregion” of the device, i.e. the region in which absorbed photons maycontribute to photocurrent, is limited to the region from which excitonsexcited by photons photons can diffuse with a reasonable probability tothe single heterojunction.

Donor (D)—acceptor (A) bulk heterojunctions (BHJs) may be used toimprove the efficiencies of both polymer and small molecule-basedphotovoltaic (PV) cells. Because the external quantum efficiency(η_(EQE)) of an organic D-A bilayer structure is often limited by ashort exciton diffusion length, the BHJ has been suggested as a means toovercome this limitation, resulting in improved η_(EQE) and powerconversion efficiency (η_(p)). Such a BHJ can consist of a blended thinfilm of a donor-like phthalocyanine (Pc) and the acceptor-like C₆₀.Recently, η_(p)=3.37% has been reported under 0.1 sun (10 mW/cm², AM1.5)illumination in a mixed ZnPc:C₆₀ PV cell. See D. Gebeyehu et al., SolarEnergy Mater. Solar Cells, 79, 81 (2003). Unfortunately, that device hada large cell series resistance (R_(S)), resulting in a reduced shortcircuit current density (J_(SC)), and hence the power efficiency fell to=1.04% at 1 sun intensity. The reason for this large R_(S) may beattributed to the presence of resistive organic layers includingpoly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and,more importantly, their contact resistances. On the other hand, recentresults show that a CuPc/C₆₀ bilayer device with a very low R_(S) showsa significant improvement in η_(p), especially at higher illuminationintensity, achieving a maximum power efficiency of =(4.2±0.2) % at 4 to12 suns. See, Xue et al., Appl. Phys. Lett., 84, 3013 (2004).

Referring now in detail to the drawings, there is illustrated in FIG. 1a schematic diagram of an organic photovoltaic cell 100 in accordancewith an embodiment of the invention. Device 100 may include a firstelectrode 102, a first organic layer 106, a second organic layer 108, athird organic layer 114, and a second electrode 104, disposed in thatorder over a substrate. First organic layer 106 comprises a mixture ofan organic acceptor material and an organic donor material. Secondorganic layer 108 comprises the organic acceptor material of firstorganic layer 106, but does not include the donor material of firstorganic layer 106. Second organic layer 108 has a thickness of betweenabout 0.5 exciton diffusion length and about 10 exciton diffusionlengths. Preferably, organic layer 108 has a thickness of about 1 to 10exciton diffusion lengths. As a result, first organic layer 106 acts abulk heterojunction, in which photogenerated excitons may dissociateinto electrons and holes. Second organic layer 108 may be photoactive inthe sense that it absorbs photons to produce excitons that may latercontribute to photocurrent, but these excitons may first diffuse to theheterojunction of first organic layer 106. Third organic layer 114comprises an exciton blocking layer, comprised of materials selected toprevent excitons from exiting second organic layer 108 into thirdorganic layer 114. Third organic layer 114 may be referred to as anon-photoactive organic layer, because it may not be responsible forabsorbing photons that contribute significantly to photocurrent.

FIG. 2 is a schematic diagram of another organic photovoltaic cell 200in accordance with an embodiment of the invention. Device 200 mayinclude a first electrode 202, a first organic layer 206, a secondorganic layer 208, and a second electrode 204, disposed in that orderover a substrate. First organic layer 206 comprises a mixture of anorganic acceptor material and an organic donor material. Second organiclayer 208 comprises the organic donor material of first organic layer206, but does not include the acceptor material of first organic layer206. Second organic layer 208 has a thickness of between about 0.5exciton diffusion length and about 10 exciton diffusion lengths, andpreferably between about 1 and 10 exciton diffusion lengths. As aresult, first organic layer 206 acts a bulk heterojunction, in whichphotogenerated excitons may dissociate into electrons and holes. Secondorganic layer 208 may be photoactive in the sense that it absorbsphotons to produce excitons that may later contribute to photocurrent,but these excitons may first diffuse to the heterojunction of firstorganic layer 206. Third organic layer 214 comprises an exciton blockinglayer, comprised of materials selected to prevent excitons from exitingsecond organic layer 208 into third organic layer 214.

Examples of diffusion lengths for various organic acceptor and donormaterials are illustrated in Table 1, below: TABLE 1 Reported ExcitonDiffusion Lengths. Diffusion Length, Material^(a) L_(D) (Å) TechniqueRef. Small Molecule Systems PTCBI  30 ± 3 PL quenching P. Peumans, AYakimov and S. Forrest, J. App. Phys., vol. 93, no. 7, April 1, 2003, p.3702 (Peumans et al.) PTCDA 880 ± 60 from η_(EQE) V. Bulovic and S. R.Forrest, Chem. Phys. 210, 13, 1996. PPEI ˜700^(b) PL quenching B. A.Gregg e al., J. Phys. Chem. B 101, 5362, 1997. CuPc 100 ± 30 fromη_(EQE) Peumans et al. 680 ± 200 from η_(EQE) T. Stübinger and W.Brütting, J. Appl. Phys. 90, 3632, 2001. ZnPc 300 ± 100 from η_(EQE) H.R. Kerp and E. E. van Faassen, Nord. Hydrol. 1, 1761, 1999. C₆₀ 400 ± 50from η_(EQE) Peumans et al.   141 from η_(EQE) L. A. A. Pettersson etal., J. Appl. Phys. 86, 487, 1999. Alq3   200 A. L. Burin and M. A.Ratner, J. Phys. Chem. A 104, 4704, 2000. ˜200 V. E. Choong et al. J.Vac. Sci. Technol. A 16, 1838, 1998. Polymer Systems PPV  70 ± 10 fromη_(EQE) J. J. M. Halls et al., Appl. Phys. Lett. 68, 3120, 1996. 120 ±30^(c) from η_(EQE) T. Stübinger and W. Brütting, J. Appl. Phys. 90,3632, 2001. PEOPT    47 from η_(EQE) L. A. A. Pettersson et al., J.Appl. Phys. 86, 487, 1999.    50 PL quenching M. Theander et al. Phys.Rev. B 61, 12 957, 2000.^(a)PPEI = perylene bis(phenethylimide), Alq₃ = tris(8-hydroxyquinoline)aluminum.^(b)Using the result for the SnO₂ quenching surface and assuminginfinite surface recombination velocity. The results leading to L_(D)^(PPEI) = 2.5 ± 0.5 μm are likely influenced by quencher diffusion andmorphological changes during solvent vapor assisted annealing.^(c)Optical interference effects not considered.

It will be understood that the listing of organic materials in Table 1,above, is exemplary and not meant to be limiting. Other materials havingsimilar or different diffusion lengths may be used without departingfrom the scope of the invention. Furthermore, it will be understood thatthe diffusion lengths listed in Table 1 are not meant to restrict theinvention disclosed herein to only those listed lengths. Other lengths,whether by virtue of the use of other materials or by virtue ofdifferent methods of determination, calculations, or measurements ofdiffusion lengths of materials identified hereinabove, may be usedwithout departing from the scope of the invention.

In one embodiment, the mixture of the organic acceptor material and theorganic donor material in a mixed organic layer, such as first organiclayer 106 (or 206) may occur in a ratio ranging from about 10:1 to about1:10 by weight, respectively. In one embodiment, an organic layerincluding a mixture of acceptor and donor materials (such as firstorganic layer 106), and an organic layer that includes only an acceptormaterial or a donor material (such as second organic layer 108 or 208)may each contribute 5 percent or more, and preferably 10 percent ormore, of the total energy output of the photoactive device. In oneembodiment, an organic layer including a mixture of acceptor and donormaterials (such as first organic layer 106 or 206), and an organic layerthat includes only an acceptor material or a donor material (such assecond organic layer 108 or 208) may each absorb 5 percent or more, andpreferably 10 percent or more, of the energy incident on the photoactivedevice. A layer that has a lower percentage of contribution to energyand/or absorption may not be considered as significantly participatingas a part of the photoactive region of the device. In one embodiment,the organic acceptor material may be selected from a group consistingof: fullerenes; perylenes; catacondensed conjugated molecular systemssuch as linear polyacenes (including anthracene, napthalene, tetracene,and pentacene), pyrene, coronene, and functionalized variants thereof.In one embodiment, the organic donor material may be selected from agroup consisting of: metal containing porphyrins, metal-free porphyrins,rubrene, metal containing phthalocyanines, metal-free phthalocyanines,diamines (such as NPD), and functionalized variants thereof, includingnaphthalocyanines. This listing is not meant to be comprehensive, andother suitable acceptor and donor materials may be used. In oneembodiment, the first organic layer 206 may consist essentially of amixture of CuPc and C₆₀. In one embodiment, the photoactive device 100,200 may further comprise a third organic layer 114, 214 that may bedisposed between the second electrode 104, 204 and the second organiclayer 108, 208, and may be a non-photoactive layer. In one embodiment,third organic layer 114, 214 may comprise2,9-dimethyl-,7-diphenyl-1,10-phenanthrolin (BCP). In one embodiment,the third organic layer 114, 214 may be an exciton blocking layer. Inone embodiment, the first electrode 102, 202 may be comprised of indiumtin oxide or other conductive oxide. In one embodiment, the secondelectrode 104, 204 may be comprised of Ag, LiF/Al, Mg:Ag, Ca/Al, andother metals. Other material selections may be used

Where a layer is described as an “unmixed” acceptor or donor layer, the“unmixed” layer may include very small amounts of the opposite materialas an impurity. A material may be considered as an impurity if theconcentration is significantly lower than the amount needed forpercolation in the layer, i.e., less than about 5% by weight.Preferably, any impurity is present in a much lower amount, such as lessthan 1% by weight or most preferably less than about 0.1% by weight.Depending upon the processes and process parameters used to fabricatedevices, some impurities of the materials in immediately adjacent layersbe unavoidable.

Preferably, blocking layers are transparent to the wavelengths of lightabsorbed by the photoactive region. Blocking layers preferably readilyaccept injection of and conduct the type of charge carrier that may betraveling through them—for example, a blocking layer disposed on theacceptor side of a photoactive region, disposed between the acceptormaterial and an electrode, should readily accept injection of electronsfrom the acceptor, and should readily conduct electrons.

A layer is described as “photoactive” if photons absorbed by that layermake a significant contribution to the photocurrent of the device. Adevice may have a photoactive region comprising several photoactivelayers. In various embodiments of the invention, the photoactive regioncomprises a plurality of photoactive layers, including a layer that is amixture of acceptor and donor materials, as well as a layer thatincludes only an acceptor or a donor material, but not both (althoughimpurities may be present as discussed above). A device that combines amixed photoactive layer with one or more unmixed photoactives layer maybe referred to as a hybrid device, because it combines favorableproperties of planar HJ devices (a D-A interface with no mixed layer),with favorable properties of a mixed layer device (a mixed D-A layerwith no unmixed A or D layer, or only minimal unmixed layers of the Aand D materials).

FIG. 3 is a schematic diagram of yet another organic photovoltaic cell300 in accordance with an embodiment of the invention. Device 300 mayinclude a first electrode 302, a third organic layer 310, a firstorganic layer 306, a second organic layer 308, a fourth organic layer314, and a second electrode 304, disposed in that order over asubstrate. First organic layer 306 comprises a mixture of an organicacceptor material and an organic donor material. Second organic layer308 comprises the organic acceptor material of first organic layer 306,but does not include the donor material of first organic layer 306.Second organic layer 308 has a thickness of between about 0.5 excitondiffusion length and about 10 exciton diffusion lengths, and preferablybetween about 1 and 10 exciton diffusion lengths. Third organic layer310 comprises the organic donor material of first organic layer 306, butdoes not include the acceptor material of first organic layer 306.Second organic layer 310 has a thickness of between about 0.5 excitondiffusion length and about 10 exciton diffusion lengths, and preferablybetween about 1 and 10 exciton diffusion lengths. As a result, firstorganic layer 306 acts as a bulk heterojunction, in which photogeneratedexcitons may dissociate into electrons and holes. Second organic layer308 and third organic layer 310 may be photoactive in the sense thatthey absorbs photons to produce excitons that may later contribute tophotocurrent, but these excitons may first diffuse to the heterojunctionof first organic layer 306. Fourth organic layer 314 comprises anexciton blocking layer, comprised of materials selected to preventexcitons from exiting second organic layer 308 into third organic layer314. Fourth organic layer 314 may be referred to as a non-photoactiveorganic layer, because it may not be responsible for absorbing photonsthat contribute significantly to photocurrent.

Preferred parameters for the embodiment of FIG. 3, such as layerthicknesses, material selections, proportions of materials in firstorganic layer 306 (the mixed layer), relative amounts of incident energyabsorbed, and relative amount of total energy output, are similar tothose for FIGS. 1 and 2.

In various embodiments of the invention, there is an organic layer thatincludes a mixture of an acceptor and a donor material (such as layers106, 206, and 306), and at least one layer that includes only the donoror acceptor material from the mixed layer (such as layers 108, 208, 308and 310). When the device absorbs a photon, an exciton may be created.The exciton may then dissociate and contribute to photocurrent if it isable to reach an appropriately designed hetero-junction. A layer thatincludes a mixture of acceptor and donor material provides a bulkheterojunction, such that there is favorably a large volume over whichsuch dissociation may occur. However, such a layer may have lowerconductivity than an unmixed layer, and lower conductivity isundesirable. Conductivity issues are aggravated by thicker layers, sothere is a limit on the thickness that such a mixed layer may have if areasonable conductivity is desired.

A layer that includes only an acceptor or a donor may favorably have ahigher conductivity than a mixed layer. However, there is noheterojunction in such a layer, such that excitons formed by theabsorption of a photon need to travel to a heterojunction in order toefficiently dissociate. As a result, there is also a limit on the usefulthickness of unmixed layers in a solar cell, but the limit may berelated more to the diffusion length of excitons as opposed toconductivity issues.

In addition, a thick photoactive region is desirable, because a thickerphotoactive layer may absorb more photons that may contribute tophotocurrent than a thinner photoactive layer.

Various embodiments of the invention provide a device that combines thefavorable properties of a device having a bulk heterojunction (such asmixed layer 106, 206 or 306), but no unmixed layer, with the favorableproperties of a device that does not have a bulk heterojunction—i.e., adevice having a pure acceptor layer that forms a planar junction with apure donor layer. The mixed and the unmixed layers are each a part ofthe photoactive region, such that the thicknesses add for purposes ofabsorbing more photons. Greater thicknesses of layers that contribute tophotocurrent may therefore be achieved than with a device where thephotoactive region includes only a mixed layer or only unmixed layers,or where most of the thickness is due to only a mixed layer or onlyunmixed layers. Or, a device with a lower resistance for a giventhickness of the photoactive region may be achieved.

In a preferred embodiment of the invention, a layer or layers thatinclude only a single acceptor or donor material, but not a mixture ofthe two, such as layers 108, 208, 308 and 310, may be selected to havehigh conductivity, while being able to contribute to the photocurrent.Excitons that are formed by a photon absorbed in such a layer mustdiffuse to a heterojunction in order to contribute to photocurrent. As aresult, a thickness for such a layer that is about 0.5 exciton diffusionlengths to about 10 exciton diffusion lengths is preferred, and morepreferably about 1 to 10 exciton diffusion lengths. For layers having athickness that is greater than about 10 diffusion lengths, anyadditional thickness may not make a significant contribution tophotocurrent, because photons absorbed too far from a heterojunction areunable to reach a heterojunction.

At the lower boundary of the unmixed photoactive layers, opticalabsorption is a more important parameter than exciton diffusion length.The “optical absorption length” of a material is the length in whichincident light intensity is reduced to (1/e), or about 37%. Typicalabsorption lengths for organic photoactive materials are in the range500-1000 Å. For CuPc, the optical absorption length is 500 Å forwavelengths in the range 500 nm-700 nm. For C₆₀, the optical absorptionlength is 1000 Å for a wavelength of 450 nm. In order for a layer tocontribute significantly to photocurrent, the layer thickness should beat least a significant fraction of an absorption length. Preferably, thethickness of a photoactive layer, such as an unmixed organic photoactivelayer, is not less than about 0.1 absorption lengths, and morepreferably is not less than about 0.2 absorption lengths. For smallerthicknesses, the layer may not make a significant contribution tophotocurrent.

In a preferred embodiment of the invention, a layer than includes amixture of acceptor and donor materials, such as layers 106, 206 and306, include 10% or more of an acceptor material and 10% or more of adonor material. It is believed that 10% is the lower limit at whichthere is enough material for percolation. Percolation is desirable inboth the acceptor and donor materials, because it allows photogeneratedelectrons and holes that result from dissociation anywhere in the mixedlayer to reach the appropriate electrodes by traveling through theacceptor and donor, respectively, without traveling through the opposite(donor or acceptor) layer. Preferably, the unmixed layers in thephotoactive region comprise one of the materials that is present in themixed layer, to avoid any HOMO/LUMO mismatch for charge carriers thatare percolating through the mixed layer and reach an unmixed layer.

D-A phase separation is needed for efficient carrier collection in bothpolymer and small molecule-based BHJ solar cells. On the other hand, theCuPc:C₆₀ mixed layer shows a large η_(p) comparable to optimized bilayerdevices employing the same materials, contrary to CuPc:3,4,9,10-peryrenetetracarboxylic bis-benzimidazole mixed layer devicesthat required annealing and phase separation to improve efficiency. See,Peumans et al., Nature, 425, 158 (2003). Indeed, following a similarannealing procedure for CuPc:C₆₀ mixed layer cells results in asignificant reduction in η_(p). This suggests that a mixed CuPc:C₆₀system may undergo phase separation during the deposition processitself, such that the mixed layer is a percolating network of bothmaterials, provided that the concentrations of both materials is abovethe percolation threshold.

Unmixed organic donor-acceptor heterojunctions may be used to provideefficient photo-generation of charge carriers upon absorption ofincident light. The efficiency of this type of cell may be limited bythe poor ability of excitons (i.e., bound electron-hole pairs) todiffuse to the donor-acceptor interface. A mixed layer, i.e., adonor-acceptor mixture, may be used to alleviate this problem bycreating a spatially distributed donor-acceptor interface that isaccessible to every photogenerated exciton generated in the mixed layer.However, since charge mobility may be significantly reduced in a mixtureas compared to a homogeneous flim, recombination of photogenerated holesand electrons is more likely to happen in a mixture, leading toincomplete collection of charge carriers.

In one embodiment of the invention, a preferred microstructure for amolecular donor-acceptor mixture is provided. A mixed layer having thepreferred microstructure may be used in photosensitive devices thateither have or do not have one or more unmixed photoactive layers. Anexample of the preferred microstructure is described with respect to amixture of CuPc and C₆₀, although other donor and acceptor materials maybe used. The preferred microstructure includes percolating paths forhole and electron transport through the mixed donor-acceptor layer, witheach path only one or a few molecules wide. Preferably, the width of thepath is 5 molecules wide or less, and more preferably 3 molecules wideor less. Photogenerated charges may be efficiently transported alongsuch paths to their respective electrodes without significantrecombination with their countercharges. The interpenetrating network ofdonor and acceptor materials forms a nanostructured, spatiallydistributed donor-acceptor interface for efficient exciton diffusion andsubsequent dissociation.

The preferred microstructure was demonstrated in a CuPc:C₆₀ mixture, 1:1ratio by weight, prepared by vacuum thermal evaporation. In the mixture,it was found that the charge transport length, i.e., the mean distancethat charges travel before recombination with their counter charges,when no bias was applied, was about 40 nm, on the same order of theoptical absorption length. It is believed that no pure donor or acceptordomains exist in the CuPc mixture. The lack of such pure domains ispreferred. The tendency of CuPc aggregation was, reduced by increasingthe content of C₆₀ in the layer.

X-ray diffraction was performed to study the crystal structure ofhomogeneous and mixed CuPc and C₆₀ films, as shown in FIG. 16. It wasfound that a homogeneous CuPc film is polycrystalline, while ahomogeneous C₆₀ film is amorphous. A mixed CuPc:C₆₀ film, 1:1 ratio byweight, is also amorphous, indicating that no significant phaseseparation occurs. By “no significant phase separation,” it is meantthat there is no aggregation measurable by presently availablemeasurement techniques. The most sensitive of these techniques at thepresent time is believed to be measurement with a synchrotron x-raysource (e.g., Brookhaven), which is capable of measuring aggregates 5molecules wide and up. Note that these definitions of “no significantphase separation” and “aggregation” does not exclude the possibility ofinterpercolating strings of molecules that may be many molecules long.

Optical absorption spectra were measured for mixed CuPc:C₆₀ films withdifferent mixing ratios, as shown in FIG. 8. From the dependence of therelative intensities of the two CuPc absorption peaks (around 620 nm and690 nm) on the mixing ratio, it was found that CuPc molecules show areduced tendncy to aggregate with increasing C₆₀ content.

Organic photovoltaic cells with a mixed CuPc:C₆₀ layer sandwichedbetween homogeneous CuPc and C₆₀ layers were fabricated, to form ahybrid planar-mixed heterojunction photovoltaic cell, and tested undersimulated AM1.5G solar illumination. The photoactive region of the cellhad 15 nm CuPc/10 run CuPc:C₆₀ (1:1 ratio by weight)/35 nm C₆₀. The cellhad a photocurrent as high as a cell having a single 33 nm thick mixedphotoactive layer, and a charge collection efficiency as high as a cellwithout a mixed layer (i.e., a planar heterojunction cell). A maximumpower conversion efficiency of 5.0% under 1 to 4 suns simulated AM1.5Gsolar illumination was obtained, compared to 3.5% for the mixed layercell under 1 to 4 suns (3.6% under 1 sun), and 4.2% under 4 to 12 sunsfor the planar heterojunction cell. Fitting the current-voltagecharacteristics of the hybrid planar-mixed heterojunction cells underillumination using a model based on the charge transport length, acharge transport length of 40 nm was obtained for the cells undershort-circuit conditions (as shown in FIG. 13), which is on the sameorder of magnitude as the optical absorption length. A CuPc:PTCBI(3,4,9,10-perylenetetracarboxyloc bis-benzimidazole) mixed layer has acharge transport length estimated at less than 5-10 nm, for comparison.

Although various embodiments are described with respect to undopedorganic layers, it is understood that dopants may be added to thevarious organic layers in order to increase conductivity and/or tomodify the light absorption characteristics of the doped organic layerto advantageously impact device or layer performance.

It is understood that the embodiments illustrated in FIGS. 1-3 areexemplary only, and that other embodiments may be used in accordancewith the present invention. Any photovoltaic cell having both a mixedorganic layer that includes both an acceptor material and a donormaterial, as well as an adjacent layer that includes only an acceptormaterial or a donor material, where both the mixed layer and the unmixedlayer contribute significantly to photocurrent, would be within thescope of embodiments of the invention. For example, the order of thelayers illustrated in FIGS. 1-3 may be altered. For example, in FIGS. 1and 2, the positions of the photoactive layers, i.e., first organiclayer 106 (or 206) and second organic layer 108 (or 208) may beswitched, with appropriate repositioning of blocking layers, etc.Additional layers may or may not also be present, such as blockinglayers, charge recombination layers, etc. For example, blocking layersmay be removed, i.e., third organic layer 114 or fourth organic layer314, and/or additional blocking layers may be present (such as ablocking layer between first organic layer 106 and underlying firstelectrode 104). Various solar cell configurations may be used, such astandem solar cells. Different materials than those specificallydescribed may be used. For example, a device where all of the electrodesare ITO may be fabricated such that the device may be transparent tosome degree. Additionally, the device could be fabricated onto asubstrate, and then applied to a supporting surface, such that the lastelectrode deposited is closest to the supporting surface. Although manyembodiments are described with respect to solar cells, other embodimentsmay be used in other types of photosensitive devices having a D-Aheterojunction, such as a photodetector.

FIG. 4 illustrates a method of making an organic photovoltaic cell inaccordance with an embodiment of the invention. The method begins atstep 400. At step 402, a first organic layer may be deposited over afirst electrode. The first organic layer may be a mixed layer, includingboth an organic acceptor material and an organic donor material. At step404, a second organic layer over may be deposited over the first organiclayer. The second organic layer maybe an unmixed layer, including eitherthe organic acceptor material or the organic donor material of the firstorganic layer, but not both. The organic layers may be deposited by anysuitable method, including thermal evaporation (or coevaporation formultiple materials) and OVPD. At step 406, a second electrode may bedeposited over the second organic layer. The method may end at step 408.

In one embodiment of the invention, an efficient organic solar cell witha vacuum co-deposited donor-acceptor copper phthalocyanine (CuPc):C₆₀mixed layer is provided. A device with a structure of indium tinoxide/330 Å CuPc:C₆₀ (1:1)/100 Å C₆₀/75 Å2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolin/Ag was fabricated. Thedevice had a series resistance of only R_(S)=0.25 Ω·cm2, resulting in acurrent density of ˜1 A/cm² at a forward bias of +1 V, and arectification ratio of 10⁶ at ±1 V. Under simulated solar illumination(all simulated solar spectra described herein were AM1.5G simulatedsolar spectrum), the short circuit current density increases linearlywith light intensity up to 2.4 suns. A maximum power conversionefficiency was measured of η_(p)=(3.6±0.2)% at 0.3 suns andη_(p)=(3.5±0.2)% at 1 sun. Although the fill factor decreases withincreasing intensity, a power efficiency as high as η_(p)=(3.3±0.2) % isobserved at 2.4 suns intensity.

In another embodiment of the invention, an efficient solar cell isprovided. A device is provided with the structure: indium-tin-oxide/150Å CuPc/100 Å CuPc:C₆₀ (1:1 by weight)/350 Å C₆₀/100 Å bathocuproine/1000Å Ag. This photovoltaic cell exhibited a maximum power conversionefficiency of (5.0±0.2)% under 1 to 4 suns of simulated AM1.5G solarillumination.

The power efficiencies achieved by embodiments of the invention arehigher than any other revious achieved for organic solar cells. Thesesurprising results are due to interactions between several features ofembodiment of the invention, including the use of an unmixed organicphotoactive layer in connection with a mixed organic photoactive layer,with thicknesses selected with efficiency in mind. Embodiments of theinvention are capable of power efficiencies of 2%, 3.5%, or 5%, orgreater. It is expected that with refinement and optimization of devicesconsistent with embodiments of the invention, even higher powerefficiencies may be achieved.

One parameter to consider in selecting the thickness of the mixed layeris the characteristic charge transport length L, which can be consideredas the average distance an electron or a hole travels in the mixed layerunder an electric field before being recombined. If the thickness of themixed layer is too great, many of the charge carriers will recombine asopposed to generating photocurrent. Selecting the thickness of the mixedlayer is therefore a tradeoff among several factors, including thedesire for a thick layer to increase absorption, and the desire for athin layer to avoid recombination. It is preferred that the thickness ofthe mixed layer be not greater than about 0.8 characteristic chargetransport lengths, and more preferably not greater than about 0.3characteristic charge transport lengths. For some of the specificembodiments described herein that use a CuPc:C₆₀ (1:1) mixed layer, thecharacteristic charge transport length of the mixed layer is about 45nm. Excellent efficiencies were obtained for devices having mixed layerthicknesses of 330 Å and 100 Å.

A device disclosed in FIG. 1 of Hiromoto, Three-layered organic solarcell with a photoactive interlayer of codeposited pigments, Appl. Phys.Lett. 58 (10) (1991) has a mixed layer with a characteristic chargetransport length of about 40 nm, and the layer thickness is about 1characteristic charge transport length. As a result, recombination inthe mixed layer of that device may account in part for the low deviceefficiency.

Photovoltaic characteristics of MPc:C₆₀ mixed devices of variousstructures are summarized in Table 2. TABLE 2 P₀ J_(SC) J_(SC)/P₀ V_(OC)η_(P) Structure (Å) (mW/cm²) (mA/cm²) (A/W) (V) FF (%) ITO/370 CuPc:C₆₀(1:1)/ 100 12.3 ± 0.6  0.12 0.53 0.43 2.8 ± 0.1 75 BCP/Ag ITO/330CuPc:C₆₀ (1:1)/ 10 1.6 ± 0.1 0.16 0.43 0.51 3.5 ± 0.2 100 C₆₀/75 BCP/Ag27 4.2 ± 0.2 0.16 0.47 0.49 3.6 ± 0.2 100 15.4 ± 0.7  0.15 0.50 0.46 3.5± 0.2 ITO/300 CuPc:C₆₀ (1:2)/ 100 11.1 ± 0.5  0.11 0.54 0.44 2.6 ± 0.1100 C₆₀/75 BCP/Ag ITO/150 CuPc/ 100 0.5 0.6 5.0 ± 0.2 00 CuPc:C₆₀(1:1)/350 C₆₀/ 100 BCP/1000 Ag ITO/PEDOT:PSS/ 10 1.5 0.15 0.45 0.5 3.37500 m-MTDATA/ 500 ZnPc:C₆₀(1:2)/500 MPP/ 100 6.3 0.063 0.50 0.33 1.04 10LiF/Alwhere P₀ is incident light intensity,J_(SC) is short circuit current density,V_(OC) is open circuit voltage,FF is fill factorη_(P) is power conversion efficiency,MPP is N,N′-dimethyl-3,4:9,10-perylene bis(dicarboximde),m-MTDATA is 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine.

The simplest mixed structure of ITO/370 Å CuPc:C₆₀/75 Å BCP/Ag shows alarge J_(SC)=(12.0±0.6) mA/cm2 at 1 sun, comparable to an optimizedbilayer device using the same combination of donor and acceptormaterials. See Xue et al., Appl. Phys Lett., 84, 3013 (2004). However,η_(p)=(2.8±0.1) % observed in this mixed device is smaller than in anoptimized bilayer due to a reduced fill factor, FF<0.5, vs FF˜0.6 in thebilayer device. See, id. Both J_(SC) and η_(p) are further improved withthe addition of a thin (100 Å) C₆₀ layer between the CuPc:C₆₀ and BCPlayers. It is believed that, by displacing the active region fartherfrom the reflective metal cathode, the additional C₆₀ layer results inan increased optical field at the D-A interface. See, Peumans et al., J.Appl. Phys., 93, 3693 (2003). A device with an optimized CuPc:C₆₀thickness of 330 Å shows that J_(SC)=(15.2±0.7) mA/cm² andη_(p)=(3.5±0.2) % at 1 sun. In this case, J_(SC) is approximately 20%larger than that of the bilayer device at 1 sun, and η_(p) is roughlyequal to that of the bilayer device at 1 sun.

Experimental and Calculations

Photovoltaic devices were fabricated on 1300 Å thick layers of indiumtin oxide (ITO) precoated onto glass substrates. The solution cleanedITO surface was exposed to ultraviolet/O₃ prior to deposition. Theorganic source materials: CuPc,C₆₀ and2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) are purified bythermal gradient sublimation, also prior to use, as described inForrest, Chem Rev., 97, 1793 (1997). All organic materials werethermally evaporated in high vacuum (<10⁻⁶ Torr) using quartz crystalmonitors to determine film thickness and deposition rate. The mixtureratio of CuPc to C₆₀ based on the wt % measured using the thicknessmonitor is fixed at 1:1, unless otherwise noted. The Ag cathodes wereevaporated through a metal shadow mask with 1 mm diameter openings. Thecurrent density—voltage (J-V) characteristics were measured in the darkand under illumination of AM1.5G simulated solar spectrum from afiltered Xe arc lamp source. Illumination intensities were measuredusing a calibrated power meter.

FIG. 5 shows an energy level diagram the device. A homogeneous D:A mixedfilm allows for both electron and hole transport to the contacts, inaddition to efficient exciton dissociation. By deposition of a Agcathode on BCP, defect states are created that transport electronsefficiently from C₆₀ to the metal cathode, while effectively blockinghole and exciton transport. At the anode, the CuPc:C₆₀ mixed layer wasdeposited directly onto the pre-cleaned ITO surface.

FIG. 6 shows J-V characteristics of a hybrid device with a structure ofITO/330 Å CuPc:C₆₀/100 Å C₆₀/75 Å BCP/Ag, in the dark and under variousillumination intensities of AM1.5G simulated solar spectrum.Specifically, J-V characteristics are provided for in the dark, and atlight intensities of 0.01 suns, 0.03 suns, 0.08 suns, 0.3 suns, 0.9suns, and 2.4 suns. The dark J-V characteristics show a rectificationratio of ˜10⁶ at ±1 V, and the forward current at +1 V is >1 Å/cm²,indicating a low series resistance of R_(S)=0.25 Ω·cm2 as obtained byfitting the J-V characterstics according to a modified ideal diodeequation. See, Xue et al., Appl. Phys. Lett., 84, 3013 (2004).

FIG. 7 shows additional photovoltaic characteristics of the devicedescribed with reference to FIG. 6. J_(SC) linearly increases withincident light intensity (P₀), with a responsivity of (0.15±0.07) A/W.Also, V_(OC) increases and FF decreases with increasing P₀. As a result,η_(p) is almost constant at all light intensities between 0.01 and 2.4suns, with a maximum of η_(p)=(3.6 ±0.2) %, and J_(SC)=(4.2±0.1) mA/cm²,V_(OC)=0.47 V and FF=0.49, under 0.3 sun illumination. At higherintensities, FF decreases to 0.42, resulting in η_(p)=(3.3±0.2) % at 2.4suns.

Although R_(S) may affect the J-V characteristics at high intensities,the small R_(S)=0.25 Ω·cm2 for the mixed device results in a voltagedrop under short circuit conditions of only J_(SC)·R_(S)=10 mV at 2.4suns. This voltage drop, in turn, is estimated to reduce η_(p) bysmaller than 0.1% compared to an ideal device (R_(S)=0 Ω·cm2). Recentlyreported results employing a ZnPc:C₆₀ mixed layer structure, see D.Gebehu et al., Solar Energy Mater. Solar Cells, 79, 81 (2003) and theZnPc entry in Table 2, shows comparable η_(p) with similar photovoltaiccharacteristics to some devices with mixed layers under lower (˜ 1/10sun) intensity, but with a significant decrease of J_(SC) and FF at 1sun, resulting in a smaller η_(p) (see Table 2). This reduction in η_(p)may be due to the large R_(S) (40-60 Ω·cm2) of the former device.

Recently, structures similar to those in Table 2 have been reported bySullivan, et al., Appl. Phys. Lett., 84, 1210 (2004), although theefficiencies of those devices are ˜3 times lower than certain devicesdisclosed herein. Peumans, et al., J. Appl. Phys., 93, 3693, have shownthat efficiency decreases exponentially with blocking (BCP) layerthickness once the layer exceeds the “damage thickness” induced duringcontact deposition. The BCP layers od Sullivan are 120 Å, apparentlyexceeding the damage thickness. Furthermore, we have also found thatmaterial purity is extremely important in determining PV cellefficiency. For devices fabricated by the inventors and describedherein, all sources of materials have been sublimed at least three timesprior to use in fabricating the devices.

FIG. 8 shows absorption spectra of CuPc:C₆₀ films with various mixtureratios, deposited on ITO. The concentrations of CuPc in mixed films are(a) 100% (CuPc single layer), (b) 62%, (c) 40%, (d) 33% and (e) 21%. Thepure CuPc film has two peaks centered at wavelengths of 620 nm and 695nm. The longer wavelength peak is due to molecular Frenkel excitongeneration, whereas the shorter wavelength feature is attributed to theformation of CuPc aggregates. The longer wavelength peak is dominant inthe gas phase or dilute solution. FIG. 8 shows that the magnitude of thelonger wavelength peak increases with increasing C₆₀ content.Accordingly, CuPc molecules show a lower tendency to aggregate withincreasing C₆₀ content. This suggests that an increase in C₆₀concentration inhibits CuPc aggregation, thereby reducing hole transportin the mixed film, perhaps leading to a low carrier collectionefficiency. This is reflected in the reduced power efficiency(η_(p)=(2.6±0.1) %, see Table 2) of a CUPC:C₆₀ (1:2) mixed layer PVcell. However, at a concentration of 1:1, there may be sufficientaggregation (albeit not measurable aggregation) of CuPc molecules,and/or the formation of CuPc “strings” or percolation paths, to allowfor low resistance hole transport. The much higher symmetry C₆₀molecules may also form a percolation path for efficient electrontransport to the cathode. At the present time, it is believed that aratio of 1.2:1 (by weight) CuPc/C₆₀ is most preferred, although otherconcentrations may be used.

FIG. 9 shows normalized photocurrent—voltage characteristics undervarious light intensities for the devices described with respect to FIG.6. The current densities are normalized by subtracting the dark current,and then dividing the AM1.5G light intensity. FIG. 9 also shows proposedphotovoltaic processes for both bilayer and mixed layer devices. In abilayer device 910, photogenerated excitons migrate to a D-A interface(1), where they separate into charge carriers in the built-in depletionregion (2), followed by sweep out through the neutral region bydiffusion assisted by the carrier concentration gradient (3). In a mixedlayer device 920, excitons are separated immediately into chargecarriers at the D-A couple (4). The charge carriers then proceed towardsthe electrodes by drift under the built-in electric field (5), with someundergoing loss due to recombination (6).

In a bilayer cell, photons may not contribute to the photocurrent ifthey are absorbed too far from a D-A interface. The distance that is“too far” is related to the exciton diffusion length (L_(D)). Theexternal quantum efficiency (η_(EQE)) as well as the absorptionefficiency of a bilayer device are limited by the efficiency for excitondiffusion to the D-A junction (η_(ED)). In a mixed device, on the otherhand, η_(ED) is high (˜100%) because all excitons are generated at theD-A molecular couple, and hence readily dissociate. This suggests thatmixed devices are not restricted by the small L_(D) characteristic oforganic thin films. Therefore, J_(SC)=15.4 mA/cm² of a mixed device at 1sun is larger than J_(SC)=11.3 mA/cm² of the optimized bilayer device.See, Xue et al., Appl. Phys. Lett., 84, 3013 (2004). However, the mixeddevice shows a large electric field dependence in the J-Vcharacteristics (see FIG. 9), resulting in a smaller FF, and hence asmaller power conversion efficiency than the bilayer device.

Electron-hole recombination may be more likely in a mixed layer devicesince charge separation away from the exciton dissociation site is madedifficult by the high resistance of the mixed layer. However, the J-Vcharacteristics under different irradiation intensities in FIG. 9 showthat the normalized photocurrent is not significantly reduced, even athigh intensity (and hence higher carrier concentrations), suggestingthat bimolecular recombination of photogenerated carriers is notsignificant in the mixed layer. Because carrier generation occurs acrossthe entire mixed layer, the carrier concentration gradient is verysmall, suggesting that the diffusion component to the total current isalso small. Thus the current within the mixed layer is primarily drivenby drift and may be strongly affected by an applied electric field (seeFIG. 9, device 910). On the other hand, in a bilayer device,photogenerated carriers at the D-A interface diffuse across the neutralregion (See FIG. 9, device 920). This process is assisted by a largecharge concentration gradient extending from the D-A interface to theelectrodes, resulting in a relatively small electric field dependence.

Another hybrid photovoltaic cell was fabricated, having the structure:indium-tin-oxide/150 Å CuPc/100 Å CUPC:C₆₀(1:1 by weight)/350 Å C₆₀/100Å bathocuproine/1000 Å Ag. This photovoltaic cell exhibited a maximumpower conversion efficiency of (5.0±0.2)% under 1 to 4 suns of simulatedAM1.5G solar illumination.

Devices were fabricated as follows: Organic hybrid HJ PV cells werefabricated on glass substrates precoated with a ˜1500 Å thicktransparent, conducting ITO anode with a sheet resistance of 15 Ω/sq,obtained from Applied Film Corp, Boulder, Colo., 80301. The substrateswere cleaned in solvent as described in Burrows et al., J. Appl. Phys.79, 7991 (1996). The substrate were then treated by UV-ozone for 5minutes, as described in Xue et al., J. Appl. Phys. 95, 1869 (2004). Theorganic layers and a metal cathode were deposited via thermalevaporation in a high vacuum chamber with a base pressure ˜2×10⁻⁷ Torr.A CuPc layer was deposited on the ITO anode, followed by a co-deposited,homogenously mixed layer of CuPc:C₆₀ (1:1 by weight), followed by a C₆₀layer. Various devices were fabricated, having different thicknesses ofthe organic layers. The CuPc layer thickness was varied between d_(D)˜50-200 Å. The co-deposited, homogenously mixed layer of CUPC:C₆₀ (1:1by weight) thickness was varied between d_(m)˜0-300 Å. The C₆₀ layerthickness was varied between d_(A)˜250-400 Å. After the C₆₀ wasdeposited, a 100 Å thick exciton-blocking layer of BCP was deposited.Finally, a 1000 Å thick Ag cathode was evaporated through a shadow maskwith 1 mm diameter openings. For devices having d_(m) greater than zero,the devices appear as illustrated in device 1010, i.e., the devices aresimilar to those of FIG. 3, where third organic layer 310 is CuPc, firstorganic layer 306 is a mixture of CuPc and C₆₀, second organic layer 308is C₆₀, and fourth organic layer 314 is BCP.

Current-voltage characteristics of the PV cells at 25° C. in the dark orunder simulated AM1.5G solar illumination from a 150 W Xe-arc lamp(Oriel Instruments) were measured using an HP 4155B semiconductorparameter analyzer. The illumination intensity was varied using neutraldensity filters and measured with a calibrated broadband optical powermeter (Oriel Instruments). To measure the external quantum efficiency, amonochromatic beam of light was used, which was generated by passing thewhite light from the Xe-arc lamp through a 0.3 m monochrometer (ActonResearch SpectraPro-300i) and whose intensity was determined using acalibrated Si photodetector (Newport 818-UV). With a chopping frequencyof 400 Hz, the photocurrent was then measured using a lock-in amplifier(Stanford Research SR830) as a function of the incident light wavelengthand the applied voltage.

FIG. 10 shows the current density vs voltage (J-V) characteristics inthe dark for a planar HJ (d_(D)=200 Å and d_(A)=400 Å, d_(m)=0) and ahybrid HJ (d_(D)=100 Å, d_(m)=200 Å, and d_(A)=300 Å) cell. Both cellsexhibit rectification ratios>10⁶ at ±1 V, and shunt resistances>1MΩ·cm². The forward-bias characteristics can be fit using the modifieddiode equation $\begin{matrix}{{J = {J_{s}\left\{ {{\exp\left\lbrack \frac{q\left( {V - {JR}_{S}} \right)}{nkT} \right\rbrack} - 1} \right\}}},} & (1)\end{matrix}$where J_(s) is the reverse-bias saturation current density, n theideality factor, R_(S) the series resistance, q the electron charge, kthe Boltzmann's constant, and T the temperature. While R_(S) isapproximately the same for both cells, ˜0.25 Ω·cm², n is reduced from1.94±0.08 for the planar HJ cell to 1.48±0.05 for the hybrid HJ cell,whereas J_(s) is also reduced from (4±1)×10⁻⁷ Å/cm² (planar HJ) to(1.0±0.3)×10⁻⁸ Å/cm² (hybrid HJ).

FIG. 11 shows the dependences of n and JS on the mixed layer thicknessdm, for hybrid HJ cells with d_(D)=d_(A) −200 Å=200 Å−d_(m)/2. Withincreasing dm, both n (open circles) and J_(s) (filled squares) decreasesignificantly at d_(m)≦100 Å, and tend to saturate at d_(m)≧100 Å.

The lower n and J_(s) for cells with a mixed layer can be attributed tothe decrease in the recombination current in the depletion region ofthese cells. For a planar HJ cell, due to the large energy offset (˜1eV) of the highest occupied and lowest unoccupied molecular orbitals(HOMO and LUMO, respectively) at the CuPc/C₆₀ interface, thediffusion-emission current is negligible; therefore, the dark current isdominated by the recombination current in the depletion region, whichincludes the entire mixed layer and part of the unmixed photoactivelayers in contact with the mixed layer, leading to n≈2. According to theShockley-Hall-Read recombination model, J_(s) for the recombinationcurrent can be expressed as: $\begin{matrix}{{J_{s,{rec}} = {\frac{{qn}_{i}W^{\prime}}{2\tau} = {\frac{1}{2}{qn}_{i}W^{\prime}N_{t}\sigma\quad v_{th}}}},} & (2)\end{matrix}$where n_(i) is the intrinsic electron/hole concentration, W′ is theeffective depletion width, τ=1/(N_(t) σ v_(th)) is the excess carrierlifetime, N_(t) is the total density of recombination centers, σ is theelectron/hole capture cross section, and v_(th) is the carrier thermalvelocity. In disordered semiconductors where charge carriers transportvia hopping processes, it has been shown by Paasch et al., Synth. Met.132, 97 (2002), that v_(th)∝μ^(1.1) for μ<1 cm²/V·s, where μ is thecarrier mobility. Therefore, a reduction in J_(s) in a mixed layer mayoccur as a result of the reduced μ in a mixed layer as compared with anunmixed layer. With a much reduced recombination current, thecontribution of the diffusion-emission current to the dark currentbecomes appreciable, leading to 1<n<2 in cells with a mixed layer. Bycomparing J_(s) for the planar HJ cell and for the hybrid HJ cells withd_(m)≧200 Å, it can be inferred that the hole mobility in CuPc and theelectron mobility in C₆₀ are reduced by approximately one and a halforders of magnitude by intermixing CuPc and C₆₀ at a ratio of 1:1 byweight.

FIG. 12 shows the photocurrent density, J_(Ph), at an illuminationintensity of P_(O)=120 mW/cm² for cells with a mixed layer having athickness of 0 Å≦d_(m)≦300 Å. Again, d_(D)=200 Å−d_(m)/2 and d_(A)=400Å−d_(m)/2. At 0 V (short circuit, filled squares), J_(Ph) increases withdm for d_(m)≦200 Å, while remaining nearly constant as dm is furtherincreased to 300 Å. Upon applying a bias of −1 V (open circles), J_(Ph)increases significantly, more for cells with a thicker mixed layer. Forthe planar HJ cell, this may be attributed to field-assisted excitondissociation away from the D-A interface. However, for the hybrid HJcells, especially those with a thick mixed layer (d_(m)≧150 Å), thesignificant increase in J_(Ph) may be attributed to an increased chargecollection efficiency (η_(CC), or fraction of photogenerated chargebeing collected at the electrodes) due to an increased electric field inthe mixed layer, which is directly related to the poor transportproperty of the mixed layer.

Based on a model described by Peumans et al., J. Appl. Phys. 93, 3693(2003), which considers both the optical interference effect and excitondiffusion, J_(Ph) of hybrid HJ cells can be simulated as a function ofthe mixed layer thickness, assuming full dissociation of excitons in themixed layer and ideal charge collection (η_(CC)=1). As shown by thesolid line 1210 in FIG. 12, using an exciton diffusion length of 70 Åand 300 Å in CuPc and C₆₀, respectively, the model prediction is inreasonable agreement with the experimental data at −1 V. The discrepancyat d_(m)≦150 Å may be attributed to the field-assisted excitondissociation in the mixed layers, which is not taken into considerationin model used to generate line 1210.

To account for the limited η_(CC) in hybrid HJ cells, a model may beused that assumes an electron (or a hole) in the mixed layer at adistance x away from the mixed layer/C₆₀ (or CuPc) umixed layerinterface has a probability of P(x)=exp(−x/L) reaching the mixedlayer/unmixed layer interface, where it is transported through theunmixed layer and collected at the electrode. L is a characteristiclength for carrier transport. Then, the overall charge collectionefficiency is: $\begin{matrix}\begin{matrix}{\eta_{CC} = {\int{{p(x)}{P(x)}{{\mathbb{d}x}/{\int{{p(x)}{\mathbb{d}x}}}}}}} \\{{= {\frac{L}{d_{m}}\left\lbrack {1 - {\exp\left( {- \frac{d_{m}}{L}} \right)}} \right\rbrack}},{{{if}\quad{p(x)}} = {constant}},}\end{matrix} & (3)\end{matrix}$where p(x) is the hole concentration. The photocurrent density J_(Ph)can be obtained by multiplying η_(CC) with the results from the modeldescribed in the previous paragraph and used to generate line 1210,which corresponds to η_(CC)=1. Fitting the experimental data of J_(Ph)at 0 V using the model described in this paragraph, dashed line 1220 isgenerated, and a characteristic charge transport length of L=450 Å±50 Åis obtained.

The characteristic charge transport length L can be considered as theaverage distance an electron or a hole travels in the mixed layer underan electric field before being recombined. Hence, L can be expressed asL=τμ(V _(bi) −V)/W≈L ₀(V _(bi) −V)/V _(bi),  (4)where τ is the carrier lifetime, μ is the carrier mobility, V_(bi) isthe built-in potential, W is the depletion width, andL₀=τμV_(bi)/W=L(V=0). The approximation is made if W does not changesignificantly with the bias voltage. The charge collection efficiencyη_(CC) now becomes a function of V through the voltage dependence of L,such that:J _(Ph)(V)=P_(O) R ₀η_(CC)(V),  (5)where R₀ is the responsivity corresponding to η_(CC)=1. The totalcurrent density is a sum of J_(Ph) and the dark current densitydescribed by Eq. (1). FIG. 13 shows the experimental J-V characteristicsat various P_(O) for a hybrid HJ cell with d_(m)=200 Å. Using theresults for J_(s), n, and R_(S) from the dark current analysis andV_(bi)=0.6 V, it may be calculated that L₀=400 Å±50 Å and R₀=(0.22±0.02)A/W by fitting the data at −1 V<V<0.6 V. L₀ obtained here is inagreement with the fitting result on the short-circuit current density.

FIG. 14 shows absorption spectra of the planar HJ cell (solid line) andthe hybrid HJ cell with d_(m)=200 Å (dashed line). The absorptionefficiency η_(A)=1−R, where R is the reflectance of light incidentthrough the glass substrate with a Ag cathode on top of the organiclayers (see structure 1410). The slight difference in the absorptionspectra for these two devices can be attributed to the differentmaterial density profile and the interference-induced non-uniformdistribution of the optical field intensity across the thickness of theorganic layers, in addition to the different aggregation states of CuPcin the MCL and PCL.

Also shown in FIG. 14 are the external quantum efficiencies, η_(ext), at0 V for a planar HJ (solid line) and a hybrid HJ (dashed line). Thehybrid HJ cell has a much higher η_(ext) in the spectral region between550 nm and 750 nm, corresponding to CuPc absorption, whereas in the C₆₀absorption region (380 nm to 530 nm), η_(ext) is slightly lower in thehybrid HJ cell as a result of a slightly lower η_(A). Therefore, theinternal quantum efficiency, η_(int)=η_(ext)/η_(A), is significantlyenhanced in the CuPc absorption region for the hybrid HJ cell ascompared to the planar HJ cell, while it is nearly the same in thespectral region where C₆₀ absorption dominates. This is consistent withthe different exciton diffusion lengths in CuPc (L_(D)˜100 Å) and C₆₀(L_(D)˜400 Å), considering that in the planar HJ cell, d_(D)=200Å˜2L_(D), while d_(A)=400 Å˜L_(D). Both the quantum efficiency and theabsorption spectra of the hybrid HJ cell show a long-wavelength tailextending from 800 nm to 900 nm, far beyond the absorption edge of CuPc(˜750 nm). This is attributed to charge transfer state absorption in theCuPc:C₆₀ mixture, similar to that observed in the Zn phthalocyanine:C₆₀mixed system. See G Ruani et al., J Chem Phys. 116, 1713 (2002).

FIG. 15 shows the illumination intensity dependences of η_(p), FF, andV_(OC) for a hybrid HJ cell (open circles) with the structure ofITO/CuPc(150 Å)/CuPc:C₆₀(100 Å, 1:1 by weight)/C₆₀(350 Å)/BCP(100Å)/Ag(1000 Å). Also shown are previously reported results for a planarHJ cell from Xue et al., Appl. Phys Lett. 84, 3013 (2004) (filledsquares) and the hybrid HJ cell of FIG. 6 (filled triangles). All threecells show a linear dependence of J_(SC) on P_(O) over the entire rangeof P_(O) used in the experiments. At 1 sun (=100 mW/cm²), J_(SC)=(11.8±0.5), (15.5±0.5), and (15.0±0.5) mA/cm² for the planar, bulk, andhybrid HJ cell, respectively. The higher photocurrent obtained in thebulk and planar HJ cells may be a result of more favorable excitondiffusion in the mixed layer compared with the unmixed layers. Thehybrid HJ cell has almost the same J_(SC) as the bulk HJ cell despiteonly using a very thin mixed layer. Except at the highest intensities,V_(OC) increases logarithmically with P_(O) for all three cells, whichcan been explained using p-n junction theory. See, Xue et al., Appl.Phys. Lett., 84, 3013 (2004). The different slope of V_(OC) tolog(P_(O)) is due to the different ideality factor of these diodes: n≈2for the planar HJ cell, and n≈1.5 for both the bulk and planar HJ cells.

The planar HJ cell has a high FF˜0.6 as a result of the low R_(S) andgood transport property of the unmixed layers. The FF is significantlyreduced for the bulk HJ cell, especially under high intensities, e.g.,FF=0.45 at 1 sun, compared with FF=0.62 for the planar HJ cell. With amuch thinner mixed layer than in the bulk HJ structure (100 Å vs 330 Å),the hybrid HJ cell shows FF≧0.6 at P_(O)≦1 sun and only slightly reducedto 0.53 at an intense illumination of ˜10 suns, indicating the muchimproved charge transport property.

Overall, the hybrid HJ cell has a maximum efficiency of η_(p)=(5.0±0.2)%at 120 mW/cm²≦P_(O)≦380 mW/cm² (see panel 1510). Decreasing theillumination intensity below 1 sun leads to a decrease in η_(p) due tothe reduction in V_(OC). Increasing the intensity above 4 suns alsocauses a slight reduction in η_(p) as a result of the reduced FF. Suchinterplay between the dependences of V_(OC) and FF on P_(O) leads to amaximum of η_(p) at an illumination intensity that can be tuned betweena fraction of a sun and a few suns by varying the mixed layer thickness.With a thicker mixed layer in the hybrid HJ structure, the FF decreasesmore significantly with P_(O), leading to η_(p) peaking at lowerintensities. For cells with a very thin mixed layer (d_(m)≦50 Å), thecell series resistance may be factor that limits FF under intenseilluminations. For example, η_(p) for a hybrid HJ cell with d_(m)=50 Åreaches the maximum at P_(O)˜4-10 suns, whereas it peaks at 0.4sun≦P_(O)≦1.2 sun for a cell with d_(m)=150 Å.

While the present invention is described with respect to particularexamples and preferred embodiments, it is understood that the presentinvention is not limited to these examples and embodiments. The presentinvention as claimed therefore includes variations from the particularexamples and preferred embodiments described herein, as will be apparentto one of skill in the art.

1. A device, comprising: a first electrode; a second electrode; aphotoactive region disposed between the first electrode and the secondelectrode, the photoactive region further comprising: a first organiclayer comprising a mixture of an organic acceptor material and anorganic donor material, wherein the first organic layer has a thicknessnot greater than 0.8 characteristic charge transport lengths; and asecond organic layer in direct contact with the first organic layer,wherein: the second organic layer comprises an unmixed layer of theorganic acceptor material or the organic donor material of the firstorganic layer, and the second organic layer has a thickness not lessthan about 0.1 optical absorption lengths.
 2. The device of claim 1,wherein the first organic layer has a thickness not greater than 0.3characteristic charge transport lengths.
 3. The device of claim 1,wherein the device has a power efficiency of 2% or greater.
 4. Thedevice of claim 1, wherein the device has a power efficiency of 5% orgreater.
 5. The device of claim 1, wherein the second organic layer hasa thickness not less than about 0.2 optical absorption lengths.
 6. Thedevice of claim 1, wherein the mixture of the organic acceptor materialand the organic donor material in first organic layer occurs in a ratioranging from about 10:1 to about 1:10, respectively.
 7. The device ofclaim 1, wherein each of the first and second organic layers contributesat least about 5 percent of the total energy output of the photoactivedevice.
 8. The device of claim 7, wherein each of the first and secondorganic layers contributes at least about 10 percent of the total energyoutput of the photoactive device.
 9. The device of claim 1, wherein eachof the first and second organic layers absorbs at least about 5 percentof the energy absorbed by the photoactive region.
 10. The device ofclaim 9, wherein each of the first and second organic layers absorbs atleast about 10 percent of the energy absorbed by the photoactive region.11. The device of claim 1, wherein the organic acceptor material isselected from a group consisting of: fullerenes; perylenes;catacondensed conjugated molecular systems such as linear polyacenes(including anthracene, napthalene, tetracene, and pentacene), pyrene,coronene, and functionalized variants thereof.
 12. The device of claim1, wherein the organic donor material is selected from a groupconsisting of: metal containing porphyrins, metal-free porphyrins,rubrene, metal containing phthalocyanines, metal-free phthalocyanines,diamines (such as NPD), and functionalized variants thereof, includingnaphthalocyanines.
 13. The device of claim 1, wherein the first organiclayer consists essentially of a mixture of CuPc and C₆₀.
 14. The deviceof claim 1, further comprising a first non-photoactive layer disposedbetween the first electrode and the second organic layer.
 15. The deviceof claim 14, wherein the first non-photoactive layer comprises2,9-dimethyl-,7-diphenyl-1,10-phenanthrolin (BCP).
 16. The device ofclaim 14, wherein the first non-photoactive layer is an exciton blockinglayer.
 17. The device of claim 1, wherein the first electrode iscomprised of indium tin oxide.
 18. The device of claim 1, wherein thesecond electrode is comprised of Ag.
 19. The device of claim 1, whereinthe second organic layer comprises the organic acceptor material of thefirst organic layer.
 20. The device of claim 1, wherein the secondorganic layer comprises the organic donor material of the first organiclayer.
 21. The device of claim 1, wherein the device is a tandem solarcell.
 22. The device of claim 1, wherein the device is a solar cell. 23.The device of claim 1, wherein the device is a photodetector.
 24. Adevice, comprising: a first electrode; a second electrode; a photoactiveregion disposed between the first electrode and the second electrode,the photoactive region further comprising: a first organic layercomprising a mixture of an organic acceptor material and an organicdonor material wherein the first organic layer has a thickness notgreater than 0.8 characteristic charge transport lengths; a secondorganic layer in direct contact with the first organic layer, wherein:the second organic layer comprises an unmixed layer of the organicacceptor material of the first organic layer, and the second organiclayer has a thickness not less than about 0.1 absorption lengths; and athird organic layer disposed between the first electrode and the secondelectrode, the third organic layer being in direct contact with thefirst organic layer, wherein: the third organic layer comprises anunmixed layer of the organic donor material of the first organic layer,and the third organic layer has a thickness not less than about 0.1optical absorption lengths.
 25. The device of claim 24, wherein thefirst organic layer has a thickness not greater than 0.3 characteristiccharge transport lengths.
 26. The device of claim 24, wherein the devicehas a power efficiency of 2% or greater.
 27. The device of claim 24,wherein the device has a power efficiency of 5% or greater.
 28. Thedevice of claim 24, wherein the second organic layer has a thickness notless than about 0.2 optical absorption lengths.
 29. An solar cell,comprising: a first electrode; a second electrode; and an organicphotoactive region disposed between the first and second electrodes,wherein the photoactive region is comprised of a mixture of two organicmaterials, and wherein the series resistance between the first andsecond electrodes is in the range of about 0.25 Ω cm²±0.1 5 Ω cm².
 30. Adevice, comprising: a first electrode; a second electrode; an firstorganic layer disposed between the first and second electrodes, whereinthe first organic layer comprises a mixture of an organic acceptormaterial and an organic donor material; and a second organic layerdisposed between the first electrode and the second electrode, wherein:the second organic layer comprises an unmixed layer of the organicacceptor material or the organic donor material of the first organiclayer, and the device is a solar cell, and photons absorbed by the firstorganic layer contribute at least 5 percent of the photocurrentgenerated by the device, and photons absorbed by the second organiclayer contribute at least 5 percent of the photocurrent generated by thedevice.
 31. The device of claim 30, wherein photons absorbed by thefirst organic layer contribute at least 10 percent of the photocurrentgenerated by the device, and photons absorbed by the second organiclayer contribute at least 10 percent of the photocurrent generated bythe device.
 32. The device of claim 1, wherein there is no significantphase separation between the organic acceptor material and the organicdonor material in the first organic layer.